Search results for "Plasma-enhanced chemical vapor deposition"
showing 10 items of 10 documents
Light harvesting with Ge quantum dots embedded in SiO2 and Si3N4
2014
Cataloged from PDF version of article. Germanium quantum dots (QDs) embedded in SiO2 or in Si3N4 have been studied for light harvesting purposes. SiGeO or SiGeN thin films, produced by plasma enhanced chemical vapor deposition, have been annealed up to 850 degrees C to induce Ge QD precipitation in Si based matrices. By varying the Ge content, the QD diameter can be tuned in the 3-9 nm range in the SiO2 matrix, or in the 1-2 nm range in the Si3N4 matrix, as measured by transmission electron microscopy. Thus, Si3N4 matrix hosts Ge QDs at higher density and more closely spaced than SiO2 matrix. Raman spectroscopy revealed a higher threshold for amorphous-to-crystalline transition for Ge QDs e…
Evolution of the sp2 content and revealed multilayer growth of amorphous hydrogenated carbon (a-C:H) films on selected thermoplastic materials
2017
Amorphous hydrogenated carbon (a-C:H) films were gradually deposited on high-density polyethylene (HDPE), polyethylene terephthalate (PET) and polyoxymethylene (POM) via an indirect (f-type) and a direct (r-type) plasma-enhanced chemical vapor deposition (PECVD) process with acetylene plasma. The surface morphologies of the thicker r-depositions on the three different thermoplastics have been analyzed by atomic force microscopy (AFM) at varying micrometer scales. Absorbance spectroscopy has been used to characterize the optical properties of all coatings. Intrinsic stress release phenomena are revealed on thicker layers through the detection of characteristic surface corrugations. Based on …
Light absorption and electrical transport in Si:O alloys for photovoltaics
2010
Thin films (100-500 nm) of the Si:O alloy have been systematically characterized in the optical absorption and electrical transport behavior, by varying the Si content from 43 up to 100 at. %. Magnetron sputtering or plasma enhanced chemical vapor deposition have been used for the Si:O alloy deposition, followed by annealing up to 1250 °C. Boron implantation (30 keV, 3-30× 1014 B/cm2) on selected samples was performed to vary the electrical sheet resistance measured by the four-point collinear probe method. Transmittance and reflectance spectra have been extracted and combined to estimate the absorption spectra and the optical band gap, by means of the Tauc analysis. Raman spectroscopy was …
Mesoporous ZnFe2O4@TiO2 Nanofibers Prepared by Electrospinning Coupled to PECVD as Highly Performing Photocatalytic Materials
2017
International audience; Zinc ferrite @ titanium dioxide (ZnFe2O4@TiO2) composite nanofibers were elaborated by combining the two different techniques: electrospinning and plasma-enhanced chemical vapor deposition (PECVD). The nanofiber compositions were controlled using different ratios of zinc to iron. Their structural, morphological, and optical properties were analyzed by scanning electron microscopy, X-ray diffraction, energy-dispersive X-ray spectroscopy, BET surface area, Raman spectroscopy, and UV–visible spectrophotometry. The photocatalytic activity has been investigated by the degradation of methylene blue under visible light. The results indicate that the combination of spinel st…
Residual crystalline silicon phase in silicon-rich-oxide films subjected to high temperature annealing
2002
Structural properties of silicon rich oxide films (SRO) have been investigated by means of micro-Raman spectroscopy and transmission electron microscopy (TEM). The layers were deposited by plasma enhanced chemical vapor deposition using different SiH4/O2 gas mixtures. The Raman spectra of the as-deposited SRO films are dominated by a broad band in the region 400-500 cm-1 typical of a highly disordered silicon network. After annealing at temperatures above 1000°C in N2, the formation of silicon nanocrystals is observed both in the Raman spectra and in the TEM images. However, most of the precipitated silicon does not crystallize and assumes an amorphous microstructure. © 2002 The Electrochem…
Carbon Nanotube Radio-Frequency Single-Electron Transistor
2004
We discuss the theory of the radio-frequency single-electron transistor and the measurements that use multiwalled carbon nanotubes as active elements. Our devices made of plasma-enhanced chemical-vapor-deposition nanotubes yield charge sensitivities of 10-20 μe/ $$\sqrt {Hz}$$ . PACS numbers: 73.23.Hk, 73.63.Fg, 85.35.Gv, 85.35.Kt.
Light absorption and conversion in solar cell based on Si:O alloy
2013
Thin film Si:O alloys have been grown by plasma enhanced chemical vapor deposition, as intrinsic or highly doped (1 to 5 at. % of B or P dopant) layers. UV-visible/near-infrared spectroscopy revealed a great dependence of the absorption coefficient and of the optical gap (Eg) on the dopant type and concentration, as Eg decreases from 2.1 to 1.9 eV, for the intrinsic or highly p-doped sample, respectively. Thermal annealing up to 400 °C induces a huge H out-diffusion which causes a dramatic absorption increase and a reduction of Eg, down to less than 1.8 eV. A prototypal solar cell has been fabricated using a 400 nm thick, p-i-n structure made of Si:O alloy embedded within flat transparent c…
Surface investigation of plasma HMDSO membranes post-treated by CF4/Ar plasma
2002
Fluorination treatment has been performed on polysiloxane membranes using a plasma glow discharge of a gases mixture CF4 and argon (plasma enhanced chemical vapor deposition). Atomic force microscopy, XPS analyses and contact angle measurements have been undertaken to explain the surface transformation and behavior, which strongly depend on the morphology, the composition and the hydrophilic/hydrophobic character of the plasma-polymerized initial membranes. Main result is that fluorination, which leads to hydrophobic membranes, has a more relevant effect on amorphous silica-like membranes than on polymer-like ones, according to their chemical composition whereas the plasma surface reaction …
Light absorption in silicon quantum dots embedded in silica
2009
The photon absorption in Si quantum dots (QDs) embedded in SiO2 has been systematically investigated by varying several parameters of the QD synthesis. Plasma-enhanced chemical vapor deposition (PECVD) or magnetron cosputtering (MS) have been used to deposit, upon quartz substrates, single layer, or multilayer structures of Si-rich- SiO2 (SRO) with different Si content (43-46 at. %). SRO samples have been annealed for 1 h in the 450-1250 °C range and characterized by optical absorption measurements, photoluminescence analysis, Rutherford backscattering spectrometry and x-ray Photoelectron Spectroscopy. After annealing up to 900 °C SRO films grown by MS show a higher absorption coefficient a…
Anomalous and normal Hall effect in hydrogenated amorphous Si prepared by plasma enhanced chemical vapor deposition
2010
The double sign anomaly of the Hall coefficient has been studied in p -doped and n -doped hydrogenated amorphous silicon grown by plasma enhanced chemical vapor deposition and annealed up to 500 °C. Dark conductivity as a function of temperature has been measured, pointing out a conduction mechanism mostly through the extended states. Anomalous Hall effect has been observed only in the as-deposited n -doped film, disappearing after annealing at 500 °C, while p -doped samples exhibit normal Hall effect. When Hall anomaly is present, a larger optical band gap and a greater Raman peak associated with Si-H bond are measured in comparison with the cases of normal Hall effect. The Hall anomaly wi…